UCSB ECE Department Dissertation Fellowship. 2015. Best Student Paper “12 Nm Gate Length Ultrathin Body InGaAs/InAs MOSFETs With 8.3·105:1. ION/IOFF,” 73rd IEEE .. 3.1 X Ray Diffraction Of N Doped AlAs0.56Sb0.44 Layers Grown At Different. V/III Ratio Mental Data From InGaAs Channels) . , Download PDF file of III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications, Published originally in 2015. This PDF file has 192 Pages pages and the PDF file size is 25.28 MB. The PDF file is written in English, Categorized in . As of 16 March 2025, this page has been bookmarked by 0 people. Now You Can Download "III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications Book" as PDF or You Can See Preview By Clicking Below Button.
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