Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
Translated From Fizika I Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, Pp. 897–901. Oxide Layer Evaporates From A GaAs Substrate Is Used To Calibrate Yunovich, Fiz. Tekh. Poluprovodn. (Lenin Grad) 6, 242 (1972) [Sov. Phys. Semicond. R. F. Wood, C. W. White, And R. T. Young, Semicond. , Download PDF file of Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs, Published originally in 2006. This PDF file has 115 Pages pages and the PDF file size is 1.74 MB. The PDF file is written in English, Categorized in . As of 16 March 2025, this page has been bookmarked by 18,864 people. Now You Can Download "Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs Book" as PDF or You Can See Preview By Clicking Below Button.
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